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| 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications 0 . 9 5 0 .9 5 2. 9 0 . 2 1. 9 0. 2 * * * High DC current gain: hFE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High-speed switching: tf = 38 ns (typ.) 1 2 3 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10s DC DC Pulse VCBO VCEX VCEO VEBO IC ICP IB Pc (Note 1) Tj Tstg 100 80 50 6 2.5 5 0.3 1.00 0.625 150 -55 to 150 V V V V A A W C C 2 1. Base 2. Emitter 3. Collector JEDEC JEITA TOSHIBA 2-3S1A Weight: 0.01g (Typ.) Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm ) 1 0 0. 1 Characteristics Symbol Rating Unit 0. 7 0 .0 5 Maximum Ratings (Ta = 25C) 2004-07-01 0. 16 0 . 0 5 0 .1 5 0 . 4 0. 1 +0.2 2.8-0.3 +0.2 1.6-0.1 2SC6033 Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 100 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.3 A VCE = 2 V, IC = 1.0 A IC = 1.0 A, IB = 33 mA IC = 1.0 A, IB = 33 mA VCB = 10 V, IE = 0, f = 1MHz See Figure 1. VCC 20 V, RL = 20 - IB1 = -IB2 = 33 mA Min 50 250 120 Typ. 18 25 470 38 Max 0.1 0.1 400 0.18 1.10 ns V V pF Unit A A V VCC 20 s IB1 Input IB2 IB2 Duty cycle < 1% IB1 RL Output Figure 1 Switching Time Test Circuit & Timing Chart Marking Part No. (or abbreviation code) W Lot code (year) Dot: even year No dot: odd year X Lot code (month) 2 2004-07-01 2SC6033 IC - VCE 3.0 Common emitter Ta=25 Pulse test 40 30 20 2.0 10 1.5 5 1000 Ta = 100C hFE - IC 2.5 Collector current IC (A) hFE 25 -55 100 1.0 2 0.5 IB = 1 mA 0 0 1 2 3 4 5 DC current gain Common emitter VCE = 2 V Pulse test 10 0.001 0.01 0.1 1 10 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) - IC 1 VBE (sat) - IC 10 Common emitter = 30 Pulse test Collector-emitter saturation voltage VCE (sat) (V) 25 Base-emitter saturation voltage VBE (sat) (V) Common emitter = 30 Pulse test 0.1 Ta = 100C -55 1 25 -55 Ta = 100C 0.01 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) IC - VBE 2.5 Common emitter VCE = 2 V Pulse test IC (A) Collector current 2.0 1.5 1.0 Ta = 100C -55 0.5 25 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) 3 2004-07-01 2SC6033 rth - tw (C/W) rth Transient thermal resistance 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25C 2 Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) 1 0.001 0.01 0.1 1 10 100 1000 1000 Pulse width tw (s) Safe Operating Area 10 IC max (Pulse)* 10 ms* 1 ms* 100 s* 10 s* IC max (Continuous)* 100 ms* IC (A) 1 DC operation Ta = 25C 10 s* Collector current *: Single nonrepetitive pulse Ta = 25C Note that the curves for 100 ms, 0.1 10 s and DC operation will be different when the devices aren't mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 VCEO max 10 100 Collector-emitter voltage VCE (V) 4 2004-07-01 2SC6033 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-01 |
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